Product Summary

The W9825G6EH-6 is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words × 4 banks × 16 bits. W9825G6EH-6 delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the personal computer industrial standard, W9825G6EH-6 is sorted into the following speed grades: -6/-6C and -75. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The – 6C is compliant to the 166MHz/CL3 specification. The -75 is compliant to the 133MHz/CL3 specification.

Parametrics

W9825G6EH-6 absolute maximum ratings: (1)Input, Output Voltage, VIN, VOUT: -0.3 to VCC + 0.3 V; (2)Supply Voltage, VCC, VCCQ: -0.3 to 4.6 V; (3)Operating Temperature, TOPR: 0 to 70℃; (4)Storage Temperature, TSTG: -55 to 150℃; (5)Soldering Temperature (10s), TSOLDER: 250℃; (6)Power Dissipation, PD: 1 W; (7)Short Circuit Output Current, IOUT: 50 mA.

Features

W9825G6EH-6 features: (1)3.3V ± 0.3V Power Supply; (2)Up to 166 MHz Clock Frequency; (3)4,194,304 Words × 4 Banks × 16 Bits Organization; (4)Self Refresh Mode: Standard and Low Power; (5)CAS Latency: 2 and 3; (6)Burst Length: 1, 2, 4, 8 and Full Page; (7)Burst Read, Single Writes Mode; (8)Byte Data Controlled by LDQM, UDQM; (9)Power Down Mode; (10)Auto-precharge and Controlled Precharge; (11)8K Refresh Cycles/64 mS; (12)Interface: LVTTL; (13)Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant.

Diagrams

W9825G6EH-6 block diagram

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W9825G6EH-6
W9825G6EH-6


IC SDRAM 256MB 166MHZ 54-TSOPII

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W982504AH

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W982504BH

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