Product Summary

The BTS432E2 is an N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. It provides protective functions. The applications of the BTS432E2 include μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads, All types of resistive, inductive and capacitve loads, Replaces electromechanical relays and discrete circuits.

Parametrics

BTS432E2 absolute maximum ratings: (1)Supply voltage (overvoltage protection): 63 V; (2)Load dump protection VLoadDump = UA + Vs, UA = 13.5 V; (3)RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high: 66.5 V; (4)Load current (Short-circuit current): self-limited A; (5)Operating temperature range: -40 to +150 ℃; (6)Storage temperature range: -55 to +150 ℃; (7)Power dissipation (DC): 125 W; (8)Inductive load switch-off energy dissipation, single pulse Tj=150 ℃: 1.7 J; (9)Electrostatic discharge capability (ESD) (Human Body Model): 2.0 kV; (10)Input voltage (DC): -0.5 to +6 V; (11)Current through input pin (DC): ±5.0 mA; (12)Current through status pin (DC): ±5.0 mA.

Features

BTS432E2 features: (1)Load dump and reverse battery protection; (2)Clamp of negative voltage at output; (3)Short-circuit protection; (4)Current limitation; (5)Thermal shutdown; (6)Diagnostic feedback; (7)Open load detection in ON-state; (8)CMOS compatible input; (9)Electrostatic discharge (ESD) protection; (10)Loss of ground and loss of Vbb protection2); (11)Overvoltage protection; (12)Undervoltage and overvoltage shutdown with autorestart and hysteresis.

Diagrams

BTS432E2 diagram

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